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D W Palmer, www.semiconductors.co.uk, 2000.12.
from which the data in the table below for the direct energy gap Eg for AlxGa1-xAs at 293K,
for x between 0 and 0.44, have been calculated by use of the formula
Eg(x) = Eg(GaAs) + 1.429eV*x - 0.14eV*x2
given in that paper as the best fit to the experimental data.
For x > 0.44, the indirect energy gap is smaller than the direct gap.
Earlier papers giving data on the energy gap values for AlxGa1-xAs are as follows:
C C Shen and D H Hartman in "Gallium Arsenide Technology"
(ed. D K Ferry; published by Howard W Sams Inc, USA, 1985): Eg(0.440) = 2.031eV
H C Casey Jr and M B Panish in "Heterostructure Lasers" (Academic Press, 1978): Eg(0.440) = 1.973eV